These deposition rates require proportionally better vacuum to achieve the same impurity levels as other deposition techniques. The most important aspect of MBE is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially. Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8–10 −12 Torr). Cho's in situ observation of MBE process using RHEED in the late 1960s. Arthur's investigations of kinetic behavior of growth mechanisms and Alfred Y. Major subsequent development of MBE films was enabled by J.R. With the development of vacuum technology, MBE process was demonstrated by Davey and Pankey who succeeded in growing GaAs epitaxial films on single crystal GaAs substrates using Günther's method. Films he deposited were not epitaxial, but were deposited on glass substrates. Original ideas of MBE process were first established by Günther. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. Molecular-beam epitaxy ( MBE) is an epitaxy method for thin-film deposition of single crystals. A simple sketch showing the main components and rough layout and concept of the main chamber in a molecular-beam epitaxy system
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